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US 8,137,148 B2Granted
Method of manufacturing monolithic parallel interconnect structure
AssigneeGeneral Electric Company
InventorsDonald Seton Farquhar, Anil Raj Duggal, Michael Scott Herzog, Jeffrey Michael Youmans, Stefan Rakuff, Linda Ann Boyd
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Abstract
An optoelectronic device having a monolithic interconnect structure includes a continuous anode layer, a discontinuous cathode layer, and an electroactive layer sandwiched between the continuous anode layer and the discontinuous cathode layer.
Claims10
A process for fabricating an optoelectronic device, said process comprising:
- conveying a web comprising a continuous unpatternted anode layer through a roll to roll apparatus while forming a patterned electroactive layer on the continuous unpatterned anode layer;
- and forming a patterned cathode layer on the electroactive layer;
- wherein portions of the electroactive layer are selectively removed in a direction parallel the direction of the web transport;
- and the cathode layer is deposited solely on portions of the electroactive layer remaining after selectively removing portions thereof without stopping to form a cross-web pattern.
1 more element
Dependencies are inferred from the claim text.