US 8,136,079 B2 · Effective gate length circuit modeling based on concurrent length and mobility analysis

Abstract

Disclosed is a computer implemented method and computer program product to determine metal oxide semiconductor (MOS) gate functional limitations. A simulator obtains a plurality of slices of a MOS gate, the slices each comprising at least one parameter, the parameter comprising a slice gate width and a slice gate length. The simulator determines a current for each slice based on a slice gate length of the slice to form a length-based current for each slice. The simulator determines a length-based current for the MOS gate by summing the length-based current for each slice. The simulator calculates a stress profile for each slice. The simulator determines a slice carrier mobility for each slice based on the stress profile of each slice. The simulator determines a carrier mobility-based current for each slice, based on each slice carrier mobility. The simulator determines a carrier mobility for the MOS gate based on the carrier mobility-based current for each slice. The simulator determines an effective length for the MOS gate based on the length-based current.

Claims6

Dependent claims

A computer implemented method to determine metal oxide semiconductor (MOS) gate functional limitations, the computer implemented method comprising:

obtaining a plurality of slices of a MOS gate, the slices each comprising at least one parameter, the parameter comprising a slice gate width, a slice gate length and a slice stress profile;
determining a drive current for each slice based on a slice gate length and a slice stress profile;
summing the drive currents for each slice to form a gate drive current;
determining a leakage current for each slice based on a slice gate length and a stress profile of the gate;
summing the leakage currents for each slice to form a gate leakage current;
and
concurrently determining an effective length for the MOS gate based on the gate drive current and the gate leakage current with determining carrier mobility for the MOS gate based on the gate drive current and the gate leakage current.

4 more elements

Dependencies are inferred from the claim text.

Effective gate length circuit modeling based on concurrent length and mobility analysis

Life of this patent

Effective gate length circuit modeling based on concurrent length and mobility analysis

Life of this patent

Abstract

Claims6