Dynamic leakage control for memory arrays
AssigneeApple Inc.
InventorsShinye Shiu, Vincent R. von Kaenel
Life of this patent
Estimating the term…
Loading patent…
AssigneeApple Inc.
InventorsShinye Shiu, Vincent R. von Kaenel
Estimating the term…
A memory circuit is disclosed that comprises a plurality of memory cells coupled to a virtual voltage rail. The plurality of memory cells may form, for example, a sub-array of an SRAM array. A switching circuit may be coupled between the virtual voltage rail and a voltage supply node, and a comparator may be coupled to compare a voltage level present on the virtual voltage rail to a reference voltage to thereby provide an output signal based on the comparison. The switching circuit may be configured to electrically couple the virtual voltage rail to the voltage supply node depending upon the output signal. In some embodiments, the switching circuit may be implemented using either a PMOS transistor or an NMOS transistor, although other embodiments may employ other switching circuits.
A memory circuit comprising:
A method comprising:
A memory circuit comprising:
The memory circuit as recited in 9, further comprising a pulse width controller configured to reduce a pulse width of the output signal from the comparator and to provide a resulting enable signal that controls whether the switching circuit is in the first state or the second state.
A memory circuit comprising:
An integrated circuit comprising:
Dependencies are inferred from the claim text.