Programming memory with reduced pass voltage disturb and floating gate-to-control gate leakage

A method for operating a non-volatile storage system which includes a set of non-volatile storage elements in communication with a set of word lines and a set of bit lines, the method comprising:

• performing at least one sense operation involving an adjacent word line of a selected word line of the set of word lines, the at least one sense operation demarcates M≧2 groups of non-volatile storage elements on the adjacent word line, the M≧2 groups of non-volatile storage elements are associated with M≧2 corresponding groups of bit lines of the set of bit lines, including at least first and second groups of bit lines;
• and
• performing multiple iterations of a programming sequence, including at least one iteration which includes:
• applying a first programming pulse to the selected word line while selecting for programming, non-volatile storage elements of the selected word line which are associated with the first group of bit lines, inhibiting programming of non-volatile storage elements of the selected word line which are associated with the second group of bit lines, and applying a first pass voltage to the adjacent word line;
• and
• applying a second programming pulse to the selected word line while selecting for programming, the non-volatile storage elements of the selected word line which are associated with the second group of bit lines, inhibiting programming of the non-volatile storage elements of the selected word line which are associated with the first group of bit lines, and applying a second pass voltage to the adjacent word line.