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US 8,134,865 B2Granted
Operating method of electrical pulse voltage for RRAM application
AssigneeMacronix International Co., Ltd.
InventorsKuo-Pin Chang, Yi-Chou Chen, Wei-Chih Chien, Erh-Kun Lai
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Abstract
Metal-oxide based memory devices and methods for operating and manufacturing such devices are described herein. A method for manufacturing a memory device as described herein comprises forming a metal-oxide memory element, and applying an activating energy to the metal-oxide memory element. In embodiments the activating energy can be applied by applying electrical and/or thermal energy to the metal-oxide material.
Claims31
A method for manufacturing a memory device, the method comprising:
- forming a metal-oxide memory element;
- after said forming, applying an activating energy to the metal-oxide memory element and
- forming bias circuitry coupled to the metal-oxide memory element, the bias circuitry adapted to apply a plurality of bias arrangements across the metal-oxide memory element, the plurality of bias arrangements comprising:
- a first bias arrangement to change a resistance state of the metal-oxide memory element from a higher resistance state to a lower resistance state;
- and
- a second bias arrangement to change the resistance state of the metal-oxide memory element from the lower resistance state to the higher resistance state.
3 more elements
A memory device comprising:
- a metal-oxide memory element programmable to a plurality of resistance states including a lower resistance state and a higher resistance state;
- and
- bias circuitry adapted to apply bias arrangements across the metal-oxide memory element, the bias arrangements comprising:
- an activating bias arrangement to apply an activating energy to the metal-oxide memory element;
- a first bias arrangement to change a resistance state of the metal-oxide memory element from a higher resistance state to a lower resistance state;
- and
- a second bias arrangement to change the resistance state of the metal-oxide memory element from the lower resistance state to the higher resistance state.
4 more elements
Dependencies are inferred from the claim text.