Exchange-assisted spin transfer torque switching

A magnetic memory device, comprising:

• a plurality of bit lines;
• a plurality of word lines;
• and
• a plurality of memory cells that are each coupled to one of the bit lines and one of the word lines, wherein at least one memory cell comprises:
• a fixed magnetic layer that provides a fixed direction of magnetization;
• an exchange-coupled magnetic multi-layer structure;
• and
• a non-magnetic layer placed between the fixed magnetic layer and the exchange-coupled magnetic multi-layer structure,
• wherein the exchange-coupled magnetic multi-layer structure comprises a recording layer configured to record information and an assisting layer having a lower anisotropy than the recording layer, and
• wherein the exchange coupling between the recording and assisting layers is operable to switch a magnetization direction of the recording layer.

A method comprising:

• forming a fixed magnetic layer that provides a fixed direction of magnetization;
• forming a non-magnetic layer;
• and
• forming an exchange-coupled magnetic multi-layer structure,
• wherein the non-magnetic layer is between the fixed magnetic layer and the exchange-coupled magnetic multi-layer structure, and
• wherein forming the exchange-coupled magnetic multi-layer structure comprises:
• forming a recording layer configured to record information;
• and
• forming an assisting layer having a lower anisotropy than the recording layer,
• wherein the exchange coupling between the recording and assisting layers is operable to switch a magnetization direction of the recording layer.