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US 8,134,860 B2Granted
Shunted phase change memory
AssigneeIntel Corporation
InventorGuy Wicker
Life of this patent
Estimating the term…
Abstract
By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may be sufficiently resistive that it heats the phase change material and causes the appropriate phase transitions without requiring a dielectric breakdown of the phase change material.
Claims11
A method comprising:
- providing a phase change memory including a phase change material that transitions between amorphous and crystalline phases;
- and
- shunting current around a portion of the phase change material that changes between the crystalline and amorphous phases.
A memory comprising:
- a phase change material that transitions between amorphous and crystalline phases;
- and
- a shunt to shunt current around said phase change material to avoid snapback in a transition from amorphous to crystalline phase.
A method comprising:
- providing a phase change memory that shunts current around a portion of a phase change material that changes between the crystalline and amorphous phases preventing snapback.
Dependencies are inferred from the claim text.