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AssigneeNovocell Semiconductor, Inc.
InventorsWalter Novosel, Ethan Sieg, Gary Craig, David Novosel
Estimating the term…
A non-volatile memory cell including an antifuse element having a programming node and a control node, a capacitor element, a precharge element, an access element, and a leakage element. The antifuse element is configured to have changed resistivity (representing a change in logic state) after the programming node is subjected to one or more voltage pulses. The capacitor element, coupled to the programming node, is configured to provide the one or more voltage pulses to the programming node. The precharge element, coupled to the programming node, is configured to increase the one or more voltage pulses provided to the programming to node. The access element, coupled to the control node, is configured to allow determination of the logic state of the antifuse element based on current flow through the access element. The leakage element is coupled to the control node and configured to modify the current flowing through the access element when the resistivity of the antifuse element has not been changed.
A non-volatile memory cell comprising:
Dependencies are inferred from the claim text.