Data protection scheme during power-up in spin transfer torque magnetoresistive random access memory

A method of protecting data during power-up of a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array, comprising:

• providing a power-up control signal during power-up to a first plurality of precharge transistors;
• and
• holding at least one of a plurality of word lines to a desired voltage level in response to the power-up control signal.

An apparatus for protecting data during power-up of a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array, comprising:

• means for providing a power-up control signal during power-up to a first plurality of precharge transistors;
• and
• means for holding at least one of a plurality of word lines to a desired voltage level in response to the power-up control signal.

A computer-readable medium including program code stored thereon for protecting data during power-up of a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array, comprising:

• program code to provide a. power-up control signal during power-up to a first plurality of precharge transistors;
• and
• program code to hold at least one of a plurality of word lines to a desired voltage level in response to the power-up control signal.

A Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) array comprising:

• a plurality of bit cells, each coupled to a plurality of word lines;
• a power-up controller configured to provide a power-up control signal to control a voltage level of the plurality of word lines and plurality of bit lines during power-up;
• a plurality of precharge transistors respectively coupled to each of the plurality of word lines and the plurality of bit lines, each precharge transistor being configured to discharge a corresponding word line or bit line to a desired voltage level based on the power-up control signal, wherein the desired voltage level is less than a write threshold of the bit cells and greater than a ground voltage level.