Decoupling capacitors
AssigneeArm Limited
InventorsMarlin Frederick, David Paul Clark, Jean-Luc Pelloie, Yew Keong Chong
Life of this patent
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Abstract
A decoupling capacitor is disclosed that has an n-type portion and a p-type portion in a semiconductor. The decoupling capacitor is formed of an NFET transistor and a PFET transistor, the PFET transistor being substantially formed in the n-type portion and the NFET transistor being substantially formed in the p-type portion, a boundary between the n-type portion and the p-type portion being substantially straight. The transistors are arranged such that a source and drain of the PFET transistor are connected to a high voltage rail and a source and drain of the NFET transistor are connected to a low voltage rail.
Claims12
A decoupling capacitor comprising:
- a semiconductor having an n-type portion and a p-type portion;
- an NFET transistor formed in said semiconductor;
- and
- a PFET transistor formed in said semiconductor, said PFET transistor being substantially formed in said n-type portion and said NFET transistor being substantially formed in said p-type portion, a boundary between said n-type portion and said p-type portion being substantially straight, said transistors configured such that a source and drain of said PFET transistor are connected to a high voltage rail and a source and drain of said NFET transistor are connected to a low voltage rail, wherein a gate of said PFET transistor is connected to said low voltage rail and a gate of said NFET transistor is connected to said high voltage rail, and said NFET transistor and said PFET transistor are arranged in parallel between said high voltage rail and said low voltage rail.
A decoupling capacitor comprising:
- a semiconductor comprising a n-type portion and a p-type portion, said n-type portion being connected to said high voltage rail and comprising a n diffusion region and said p-type semiconductor portion being connected to said low voltage rail and comprising a p diffusion region;
- and
- two reverse biased PN junctions, said two reverse biased PN junctions comprised of said p diffusion region being connected to said low voltage rail and said n diffusion region being connected to said high voltage rail.
Dependencies are inferred from the claim text.