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US 8,134,404 B2Granted
Semiconductor device that degrades leak current of a transistor
AssigneeKabushiki Kaisha Toshiba
InventorsMitsuyuki Ashida, Mototsugu Hamada
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Abstract
A semiconductor device, has a main transistor that is a first-conductivity-type MOS transistor and has the drain connected to a first potential; a first switch circuit that is connected between the source of said main transistor and a second potential; a dummy transistor that is a first-conductivity-type MOS transistor whose source serves also as the source of said main transistor; and a second switch circuit that is connected between the drain of said dummy transistor and said first potential or said second potential.
Claims5
A semiconductor device, comprising:
- a substrate;
- a first well formed in the substrate;
- a first transistor formed in the first well;
- a second transistor formed in the first well, adjacent to the first transistor, and having a drain that serves also as a drain of the first transistor;
- a third transistor formed in the first well, adjacent to the first transistor, and having a source that serves also as a source of the first transistor;
- a second well formed in the substrate;
- a fourth transistor formed in the second well;
- and
- wherein a source of the second transistor, a gate of the second transistor, a drain of the third transistor, a gate of the third transistor, and a drain of the fourth transistor are connected to each other, and
- a source of the fourth transistor is connected to a potential.
7 more elements
Dependencies are inferred from the claim text.