Low EMC/EMI emissions' gate driver for wide supply voltage ranges
AssigneeInfineon Technologies AG
InventorsFabrizio Cortigiani, Franco Mignoli, Gianluca Ragonesi, Silvia Solda
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Abstract
A method controls a power MOS transistor having a control terminal and a load path, the load path connected in series with a load between voltage supply terminals, wherein a power supply voltage between the voltage supply terminals imposes a load voltage across the load and a load path voltage across the load path of the power MOS transistor. The method includes generating a control current for the control terminal during a switching process when the power MOS transistor changes switching states. The control current is dependent on the power supply voltage and on at least one of the group consisting of the load path voltage and the load voltage.
Claims21
A method for controlling a power MOS transistor having a control terminal and a load path, the load path connected in series with a load between voltage supply terminals, wherein a power supply voltage between the voltage supply terminals imposes a load voltage across the load and a load path voltage across the load path of the power MOS transistor, the method comprising:
- generating a control current for the control terminal during a switching process when the power MOS transistor changes switching states, the control current dependent on the power supply voltage and on at least one of the group consisting of the load path voltage and the load voltage, and
- generating the control current based at least temporarily on at least one of a group consisting of:
- a ratio of the load path voltage to the power supply voltage;
- and a ratio of the load voltage to the power supply voltage.
An arrangement, comprising:
- a power MOS transistor having a control terminal and a load path, the load path configured to be connected in series with a load between voltage supply terminals, wherein a power supply voltage between the voltage supply terminals is configured to impose a load voltage across the load and a load path voltage across the load path of the power MOS transistor, and
- a driver circuit configured to generate a control current during a switching process when the power MOS transistor changes states, the control current generated in dependence on the power supply voltage and on at least one of the group consisting of the load path voltage and the load voltage,
- wherein the driver circuit is configured such that the control current generated during the switching process is dependent at least temporarily on at least one a group consisting of:
- a ratio of the load path voltage to the power supply voltage;
- and a ratio of the load voltage to the power supply voltage.
Dependencies are inferred from the claim text.