Electronic elements and devices with trench under bond pad feature

An electronic device incorporating a composite dielectric region (CDR) under a bonding pad coupled to an active device, comprising:

• a semiconductor substrate having a bonding pad region and an active device region;
• a composite dielectric region on the substrate in the bonding pad region and underlying the bonding pad, wherein the composite dielectric region comprises insulating dielectric regions and non-single crystal semiconductor inclusion regions, the inclusion regions being electrically isolated from the bonding pad and the substrate by portions of the insulating dielectric regions that cover top surfaces of the inclusion regions, and that are located at sides of the inclusion regions;
• the bonding pad overlying the insulating dielectric regions and electrically isolated from the substrate;
• and
• an active device in the active device region electrically coupled to the bonding pad by an interconnection.

An electronic element incorporating a composite dielectric region (CDR) under a bonding pad coupled to an active device, the electronic element comprising:

• a semiconductor substrate of a first material having a first thermal expansion coefficient (TEC) and having a first surface, wherein the substrate has therein a first region adapted to receive the active device and a second region adapted to receive the bonding pad;
• spaced-apart trenches of a width and a depth in the substrate, wherein columns of substantially undisturbed substrate material are present between the trenches and other portions of the substrate material beneath the trenches;
• a dielectric having a second TEC in the trenches, wherein a substantially centrally located void is present in the dielectric extending from the first surface into the trenches but not extending to other portions of the substrate material beneath the trenches;
• an inclusion material filling the trenches, wherein the inclusion material is electrically floating with respect to the substrate and has a third TEC less than the second TEC;
• dielectric regions covering the inclusion material, wherein a combination of the dielectric, the dielectric regions, and the electrically floating inclusion material forms the composite dielectric region adapted to support the bonding pad;
• the active device in an active device region proximate the composite dielectric region, wherein the active device has a first terminal;
• and
• the bonding pad on the composite dielectric region above the dielectric and inclusion material, wherein the bonding pad is electrically isolated from the inclusion material, and wherein the bonding pad is electrically coupled to the first terminal of the active device.