Radio frequency semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsYoshitomo Sagae, Fumio Sasaki, Ryoichi Ohara
Life of this patent
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Abstract
A semiconductor device receiving as input a radio frequency signal having a frequency of 500 MHz or more and a power of 20 dBm or more is provided. The semiconductor device includes: a silicon substrate; a silicon oxide film formed on the silicon substrate; a radio frequency interconnect provided on the silicon oxide film and passing the radio frequency signal; a fixed potential interconnect provided on the silicon oxide film and placed at a fixed potential; and an acceptor-doped layer. The acceptor-doped layer is formed in a region of the silicon substrate. The region is in contact with the silicon oxide film. The acceptor-doped layer is doped with acceptors.
Claims9
A semiconductor device comprising:
- a silicon substrate;
- a silicon oxide film formed on the silicon substrate;
- a first pad provided on the silicon oxide film and inputting or outputting a radio frequency signal;
- a first interconnect provided on the silicon oxide film and connected to the first pad;
- a second pad provided on the silicon oxide film and placed at a fixed potential;
- a second interconnect provided on the silicon oxide film and connected to the second pad;
- and
- an acceptor-doped layer formed in a region of the silicon substrate, the region being in contact with the silicon oxide film, the acceptor-doped layer being doped with acceptors and located at a region immediately below a region between the first interconnect and the second interconnect,
- the acceptor-doped layer having a sheet concentration of acceptors greater than that of the silicon substrate and higher than a sheet concentration of interface carriers of the silicon substrate, and
- an acceptor concentration on an acceptor concentration profile along depth in the silicon substrate being maximized at a first position, decreasing with the depth from the first position to a second position deeper than the first position, and remaining larger than zero and substantially constant below the second position.
Dependencies are inferred from the claim text.