III-V compound crystal and semiconductor electronic circuit element
AssigneeSumitomo Electric Industries, Ltd.
InventorsSeiji Nakahata, Koji Uematsu, Ryu Hirota
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Abstract
Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates, and can be used to manufacture semiconductor devices with good quality and at high yields. The III-V crystals are characterized by the following properties: the carrier concentration, resistivity, and dislocation density of the III-V compound crystal are uniform to within ±30% variation along the surface; the III-V compound crystal is misoriented from the c-plane such that the crystal surface does not include any region where its off-axis angle with the c-plane is 0°; and the full width at half-maximum in XRD at the crystal center of the III-V compound is not greater than 150 arcsec.
Claims4
A III-V compound crystal for a semiconductor electronic circuit element, the III-V crystal characterized by the following properties:
- the carrier concentration, resistivity, and dislocation density of the III-V compound crystal are uniform to within ±30% variation along the surface;
- the III-V compound crystal is misoriented from the c-plane such that the crystal surface does not include any region where its off-axis angle with the c-plane is 0°;
- and
- the full width at half-maximum in XRD at the crystal center of the III-V compound is not greater than 150 arcsec.
Dependencies are inferred from the claim text.