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US 8,134,208 B2Granted
Semiconductor device having decreased contact resistance
AssigneeGlobalfoundries Inc.
InventorsZhonghai Shi, David Wu, Mark Michael
Life of this patent
Estimating the term…
Abstract
Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.
Claims5
A semiconductor device comprising:
- a semiconductor device structure comprising:
- a silicide portion having a top silicide surface and an outer sidewall silicide surface;
- and
- a semiconductor region of a silicon on insulator (SOI) substrate overlying a buried oxide layer of the SOI substrate, the semiconductor region having an outer sidewall semiconductor surface that is common to and continuous with the outer sidewall silicide surface;
- and
- an electrically conductive contact, wherein the contact is electrically connected directly to the top silicide surface, is in direct physical contact with the top silicide surface, is electrically connected directly to the outer sidewall silicide surface, is in direct physical contact with the outer sidewall silicide surface, is electrically connected directly to the outer sidewall semiconductor surface, and is in direct physical contact with the outer sidewall semiconductor surface.
3 more elements
A semiconductor device comprising:
- a semiconductor device structure comprising a silicide portion having a top silicide surface and an outer sidewall silicide surface and a portion of silicon material overlying a buried oxide layer;
- and
- an electrically conductive contact, wherein the contact includes two or more contact fingers, and wherein each of the two or more contact fingers is electrically connected directly to the top silicide surface, is in direct physical contact with the top silicide surface, is electrically connected directly to the outer sidewall silicide surface, is in direct physical contact with the outer sidewall silicide surface, is electrically connected directly to an outer sidewall surface of the portion of silicon material, and is in direct physical contact with the outer sidewall surface of the portion of silicon material, wherein the outer sidewall silicide surface and the outer sidewall surface of the portion of silicon material are common and continuous with each other.
Dependencies are inferred from the claim text.