Nonvolatile semiconductor memory including a gate insulating film and an inter-gate insulating film

A nonvolatile semiconductor memory comprising:

• a memory cell including:
• an element region partitioned by an isolation region in a semiconductor substrate;
• a first gate insulating film contacting to the element region;
• a charge storage layer contacting to the first gate insulating film;
• a multilayer insulator contacting to the charge storage layer;
• and
• a control gate electrode contacting to the multilayer insulator,
• the first gate insulating film including:
• a first tunnel film;
• a first high-dielectric-constant film contacting to the first tunnel film and having a greater dielectric constant than the first tunnel film;
• and
• a second tunnel film contacting to the first high-dielectric-constant film and having the same configuration as that of the first tunnel film,
• the multilayer insulator including:
• a first insulating film;
• a second high-dielectric-constant film contacting to the first insulating film and having a greater dielectric constant than the first insulating film;
• and
• a second insulating film contacting to the second high-dielectric-constant film and having the same configuration as that of the first insulating film,
• wherein a dielectric constant of the second high-dielectric-constant film is greater than a dielectric constant of the first high-dielectric-constant film,
• wherein a thickness of the first tunnel film is smaller than a thickness of the first insulating film,
• a thickness of the second tunnel film is smaller than a thickness of the second insulating film, and
• a thickness of the first high-dielectric-constant film is smaller than a thickness of the second high-dielectric-constant film.