Semiconductor device and method of fabricating the same

A method of fabricating a semiconductor device, the method comprising:

• forming a first mold layer over a substrate;
• etching the first mold layer to form a first open region;
• forming a first pillar type storage node buried in the first open region;
• forming a support layer including an opening over the first mold layer and the first pillar type storage node, wherein the opening acts as a path through which an etch solution infiltrates;
• forming a second mold layer over the support layer;
• etching the second mold layer and the support layer to form a second open region exposing a top surface of the first pillar type storage node;
• forming a second pillar type storage node buried in the second open region;
• and
• supplying an etch solution to remove the first and the second mold layers.

A semiconductor device, comprising:

• a plurality of multi-layered pillar type storage nodes;
• a support layer supporting each of the plurality of storage nodes and partially providing openings to regions between the plurality of storage nodes, wherein the support layer has an integral structure;
• a dielectric layer covering the plurality of storage nodes and the support layer;
• and a plate electrode formed over the dielectric layer, wherein each multi-layered pillar type storage node is formed of at least two stacked pillars.