Memory cells, memory cell constructions, and memory cell programming methods
AssigneeMicron Technology, Inc.
InventorChandra Mouli
Life of this patent
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Abstract
Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the second conductive material. A resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material. Other embodiments include a diode including metal and a dielectric material and a memory component connected in series with the diode. The memory component includes a magnetoresistive material and has a resistance that is changeable via a current conducted through the diode and the magnetoresistive material.
Claims18
A memory cell comprising:
- a memory component comprising:
- a first conductive material comprising a metal;
- a second conductive material;
- and
- an oxide material between the first conductive material and the second conductive material;
- and
- wherein a resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material, the current being sufficient to cause electromigration of the metal from the first conductive material into the oxide material.
A memory cell comprising:
- a memory component comprising:
- a first conductive material;
- a second conductive material;
- and
- an oxide material between the first conductive material and the second conductive material;
- and
- wherein a resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material and wherein the first conductive material comprises a doped chalcogenide.
A memory cell construction comprising:
- a substrate;
- a bitline over the substrate;
- dielectric material over the bitline;
- a metal material over the dielectric material;
- an oxide material over the metal material;
- a conductive material over the oxide material;
- a wordline over the conductive material;
- and
- wherein a resistance of the memory cell construction is susceptible to modification by a current conducted from the wordline through the conductive material, the oxide material, the metal material, and the dielectric material to the bitline.
A memory cell construction comprising:
- a substrate;
- a bitline over the substrate;
- dielectric material over the bitline;
- a metal material over the dielectric material;
- a magnetoresistive material over the metal material;
- a wordline over the magnetoresistive material;
- and
- wherein the memory cell construction has a resistance that is configurable via a current conducted from the wordline through the magnetoresistive material, the metal material, and the dielectric material to the bitline.
Dependencies are inferred from the claim text.