Magneto-resistance effect element and magnetic memory

A magneto-resistance effect element comprising:

• a first magnetization pinned layer whose direction of magnetization is fixed;
• a magnetization free layer whose direction of magnetization is variable;
• a tunnel barrier layer which is provided between the first magnetization pinned layer and the magnetization free layer;
• a second magnetization pinned layer which is provided on the opposite side of the magnetization free layer from the tunnel barrier layer and whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and;
• a non-magnetic layer which is provided between the magnetization free layer and the second magnetization pinned layer,
• a direction of magnetization of the magnetization free layer being made variable when a current is caused to flow between the first magnetization pinned layer and the second magnetization pinned layer, wherein
• when the second magnetization pinned layer is made of Co-rich ferromagnetic material, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr and Hf;
• when the second magnetization pinned layer is made of Fe-rich ferromagnetic material, material for the non-magnetic layer is metal including Ir;
• and
• when the second magnetization pinned layer is made of Ni-rich ferromagnetic material, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, and Hf.