Semiconductor device and method of manufacturing the same
AssigneeFujitsu Semiconductor Limited
InventorNaoyoshi Tamura
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Abstract
Aimed at providing a highly reliable semiconductor device appropriately increased in stress at the channel region so as to improve carrier injection rate, thereby dramatically improved in transistor characteristics, and made adaptable also to recent narrower channel width, and a method of manufacturing the same, and a method of manufacturing the same, a first sidewall composed of a stress film having expandability is formed on the side faces of a gate electrode, a second sidewall composed of a film having smaller stress is formed on the first sidewall, and a semiconductor, which is a SiC layer for example, is formed as being positioned apart from the first sidewall while placing the second sidewall in between.
Claims6
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film formed over said semiconductor substrate;
- a gate electrode formed over said gate insulating film;
- a first sidewall including a stress film having expandability, formed over the side faces of said gate electrode and in contact with said semiconductor substrate;
- and
- a semiconductor layer containing SiC, formed in the surficial portion of said semiconductor substrate,
- wherein said semiconductor layer is formed in a recess formed in said semiconductor substrate, and
- wherein said semiconductor layer is positioned apart from said first sidewall in the in-plane direction of the surficial portion of said semiconductor substrate.
Dependencies are inferred from the claim text.