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US 8,134,188 B2Granted
Circuits and methods for improved FET matching
AssigneeAgere Systems Inc.
InventorsKenneth G. Richardson, Michael Straub
Life of this patent
Estimating the term…
Abstract
Various embodiments of the present invention provide circuits and methods for improved FET matching. As one example, such methods may include providing two or more transistors. Each of the transistors includes a channel that varies in cross-sectional width from the source to the drain, and the transistors are matched one to another.
Claims28
A transistor circuit, wherein the transistor circuit comprises:
- a transistor pair, the transistor pair including:
- a first transistor including:
- a first drain having a first side and a second side;
- a first source having a third side and a fourth side, wherein the first side is closer to the third side than to the fourth side, wherein the first side is closer to the third side than the second side is to the third side;
- and
- a first channel extending between the first drain and the first source, wherein a cross-sectional width of the first channel at the third side of the first source is substantially less than a cross-sectional width of the first channel at the first side of the first drain, wherein the first drain is the closest drain disposed over the first channel to the third side, wherein a gate extends continuously from one lateral side of the gate to another lateral side of the gate, the gate extending across the first channel such that a cross-sectional width of the first channel at the one lateral side is greater than the cross-sectional width of the first channel at the other lateral side;
- a second transistor including:
- a second drain and a second source, wherein a second channel extends between the second drain and the second source, wherein a cross-sectional width of the second channel near the second source is less than a cross-sectional width of the second channel near the second drain, wherein the second drain includes a fifth side and a sixth side, wherein the second source includes a seventh side and an eighth side;
- wherein the fifth side is closer to the seventh side than to the eighth side;
- wherein the fifth side is closer to the seventh side than the sixth side is to the seventh side;
- wherein the second drain is the closest drain to the third side;
- wherein the second channel varies in cross-sectional width from the seventh side of the second source to the fifth side of the second drain.
9 more elements
An electrical circuit, the electrical circuit comprising:
- a first transistor, wherein the first transistor includes a first drain having a first side and a second side, and a first source having a third side and a fourth side;
- wherein the first side is closer to the third side than to the fourth side;
- wherein the first side is closer to the third side than the second side is to the third side;
- wherein the first transistor includes a first channel extending from the first drain to the first source, and wherein the first channel varies in cross-sectional width from the third side of the first source to the first side of the first drain;
- and
- a second transistor, wherein the second transistor includes a second drain and a second source, wherein the second transistor includes a second channel extending from the second drain to the second source, and wherein the second channel varies in cross-sectional width from the second source to the second drain, and wherein the second drain is the closest drain to the third side.
3 more elements
A transistor circuit, wherein the circuit comprises:
- a first transistor including:
- a first node and a second node;
- wherein the first node includes a first side and a second side;
- wherein the second node includes a third side and a fourth side;
- wherein the first side is closer to the third side than to the fourth side, wherein the first side is closer to the third side than the second side is to the third side;
- and
- a first channel extending between the first node and the second node, wherein a cross-sectional width of the first channel near the first side of the first node is less than a cross-sectional width of the first channel near the third side of the second node,
- a second transistor including:
- a third node and a fourth node;
- and
- a second channel extending between the third node and the fourth node, wherein a cross-sectional width of the second channel near the third node is less than a cross-sectional width of the second channel near the fourth node, wherein the fourth node includes a fifth side and a sixth side, wherein the third node includes a seventh side and an eighth side;
- wherein the fifth side is closer to the seventh side than to the eighth side;
- wherein the fifth side is closer to the seventh side than the sixth side is to the seventh side:
- wherein the fourth node is the closest drain to the first side;
- wherein the second channel varies in cross-sectional width from the seventh side of the third node to the fifth side of the fourth node;
- and
- a gate disposed over both the first channel and the second channel, wherein the gate extends continuously from a first lateral side of the gate to a second lateral side of the gate, and wherein the gate extends across the first channel such that a cross-sectional width of the first channel at the first lateral side is greater than the cross-sectional width of the first channel at the second lateral side.
14 more elements
Dependencies are inferred from the claim text.