Integrated mask-programmable logic devices with multiple metal levels and manufacturing process thereof

A method for forming an integrated mask-programmable device, comprising the steps of:

• forming a plurality of metal levels including a top metal level, a bottom metal level and a first intermediate metal level formed between said top and bottom metal levels;
• forming a plurality of via levels arranged between the bottom and the first intermediate metal levels and between the first intermediate and the top metal levels and connecting each metal level to adjacent metal levels, said plurality of metal levels defining a first, a second and at least a third terminal, wherein an intermediate metal region of said first intermediate metal level forms the third terminal;
• said top and bottom metal levels comprising at least two metal regions, and said first intermediate metal level comprising at least three metal regions;
• connecting said first terminal to said third terminal or said second terminal to said third terminal by modifying a single metal or via level.

An integrated mask-programmable device, comprising:

• a plurality of metal levels including a top metal level, a first intermediate metal level, and a second intermediate metal level formed between said top and bottom metal levels;
• a plurality of via levels arranged between the bottom and the top metal levels and connecting each metal level to adjacent metal levels;
• said plurality of metal levels forming a first, a second and at least a third terminal, and
• said top and bottom metal levels comprising at least two metal regions, and said first and second intermediate metal levels comprising at least three metal regions.

A method for forming an integrated mask-programmable device, comprising the steps of:

• forming a plurality of metal levels including a top metal level, a bottom metal level, a first intermediate metal level and a second intermediate metal level formed between said top and bottom metal levels;
• forming a plurality of via levels arranged between the bottom and the top metal levels and connecting each metal level to adjacent metal levels, said plurality of metal levels defining a first, a second and at least a third terminal;
• said top and bottom metal levels comprising at least two metal regions, and said first intermediate metal level comprising at least three metal regions;
• connecting said first terminal to said third terminal or said second terminal to said third terminal by modifying a single metal or via level.