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US 8,134,172 B2Granted
LED and fabrication method thereof
AssigneeLG Innotek Co., Ltd.
InventorsSang Kee Kim, Song Jae Lee, Hea Jung Jung
Life of this patent
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Abstract
A light emitting diode is provided. The diode includes: a substrate; a first nitride gallium layer disposed above the substrate; a first electrode provided at one portion of and above the first nitride gallium layer; an active layer provided above the first nitride gallium layer, for emitting light; a second nitride gallium layer provided above the active layer; and transparent electrodes spaced apart from one another above the second nitride gallium layer.
Claims7
An LED, comprising:
- a first gallium nitride layer;
- a first electrode at one portion of and above the first gallium nitride layer;
- an active layer above the first gallium nitride layer;
- a second gallium nitride layer above the active layer;
- a plurality of transparent electrodes on the second gallium nitride layer, wherein one of the plurality of transparent electrodes is electrically connected to, and is physically isolated from, another of the plurality of transparent electrodes;
- a second electrode above the second gallium nitride layer;
- and
- a plurality of connection units directly in contact with the second gallium nitride layer, each connection unit electrically connecting a respective one of the plurality of transparent electrodes with the second electrode.
5 more elements
Dependencies are inferred from the claim text.