Group-III nitride semiconductor device
AssigneeShowa Denko K.K.
InventorsHiromitsu Sakai, Mineo Okuyama
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Abstract
An object of the present invention is to provide a Group III nitride semiconductor element which comprises a thick AlGaN layer exhibiting high crystallinity and containing no cracks, and which does not include a thick GaN layer (which generally serves as a light-absorbing layer in an ultraviolet LED). The inventive Group III nitride semiconductor element comprises a substrate; a first nitride semiconductor layer composed of AlN which is provided on the substrate; a second nitride semiconductor layer composed of Alx1Ga1-x1N (0≦x1≦0.1) which is provided on the first nitride semiconductor layer; and a third nitride semiconductor layer composed of Alx2Ga1-x2N (0<x2<1 and x1+0.02≦x2) which is provided on the second nitride semiconductor layer.
Claims14
A Group III nitride semiconductor element comprising
- a substrate;
- a first nitride semiconductor layer composed of AlN single crystal having a thickness of 0.005 to 0.5 μm which is provided on the substrate;
- a second nitride semiconductor layer composed of Alx1Ga1-x1N(0<x1≦0.05) which is provided on the first nitride semiconductor layer;
- a third nitride semiconductor layer composed of Alx2Ga1-x2N(x1+0.02≦x2≦0.5) which is provided on the second nitride semiconductor layer;
- and
- a fourth nitride semiconductor layer which is provided on the third nitride semiconductor layer, the fourth nitride semiconductor layer including:
- an n-type contact layer composed of AlaGa1-aN (0<a<1),
- an n-type cladding layer composed of AlbGa1-bN (0<b<0.4) which is provided on the n-type contact layer, and
- a light-emitting layer which has a multiple quantum well (MQW) structure including a well layer composed of Ga1-sInsN (0<s<0.1) and a barrier layer composed of AlcGa1-cNc(0≦c<0.3 and c<b) doped with Si, and is provided on the n-type cladding layer.
Dependencies are inferred from the claim text.