Back to results
US 8,134,167 B2Granted
Light emitting device and manufacturing method of the same
AssigneeLG Innotek Co., Ltd.
InventorHyo-Kun Son
Life of this patent
Estimating the term…
Abstract
A light emitting device is provided. In the light emitting device, a multi-layer for intercepting a reverse voltage applied to an active layer is formed between the active layer and a GaN layer. Accordingly, the reliability and operational characteristic of the light emitting device can be improved.
Claims11
A method for manufacturing a light emitting device, the method comprising the steps of:
- forming a buffer layer;
- forming an N-type gallium nitride layer on the buffer layer;
- forming a super lattice structure including InGaN on the N-type gallium nitride layer,
- wherein the super lattice structure is not doped with an n-type impurity,
- wherein the super lattice structure including InGaN includes a plurality of first InGaN layers and a plurality of second InGaN layers,
- wherein each of the plurality of first InGaN layers has an In composition less than an In composition of each of the plurality of second InGaN layers, and
- wherein the first InGaN layer is directly on the N-type gallium nitride layer;
- forming an active layer on the super lattice structure and including an InGaN/InGaN structure of a multi-quantum well structure,
- wherein the active layer is directly on one of the plurality of second InGaN layers;
- and
- forming a P-type gallium nitride layer on the active layer,
- wherein the super lattice structure including InGaN has a plurality of pits formed thereon and wherein a non-zero number of the plurality of pits is 50 or less per area of 5 μm×5 μm, and
- wherein the buffer layer is grown at a first temperature,
- wherein the first InGaN layer of the super lattice structure including InGaN is grown at a second temperature higher than the first temperature,
- wherein the second InGaN layer of the super lattice structure including InGaN is grown at a third temperature higher than the first temperature and lower than the second temperature, and
- wherein the active layer is grown at a fourth temperature of 600˜800° C. and the fourth temperature is lower than the second temperature and the third temperature.
13 more elements
A light emitting diode (LED), comprising:
- a substrate;
- a buffer layer on the substrate;
- an undoped GaN layer on the buffer layer;
- a GaN layer between the buffer layer and the undoped GaN layer;
- an N-type GaN layer directly on the undoped GaN layer;
- a super lattice structure including InGaN directly on the N-type GaN layer,
- wherein the super lattice structure is not doped with an n-type impurity,
- wherein the super lattice structure including InGaN includes a plurality of first layers and a plurality of second layers,
- wherein each of the plurality of first layers has an In composition less than an In composition of each of the plurality of second layers,
- wherein the first layer is directly on the N-type GaN layer,
- wherein each of the first layers has a thickness of 1˜3000 Å, and
- wherein each of the second layers has a thickness of 1˜3000 Å;
- an active layer on the super lattice structure including an InGaN/InGaN structure of a multi-quantum well structure, wherein the active layer is directly on the second layer;
- and
- a P-type GaN layer on the active layer,
- wherein the super lattice structure including InGaN has a plurality of pits thereon and wherein a non-zero number of the plurality of pits is 50 or less per area of 5 μm ×5 μm.
13 more elements
Dependencies are inferred from the claim text.