Semiconductor device including zinc oxide containing semiconductor film
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKengo Akimoto
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Abstract
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.
Claims30
A semiconductor device comprising:
- a gate electrode;
- a gate insulating film over the gate electrode;
- a metal film over the gate insulating film;
- a conductive film comprising an oxide over and in contact with the metal film;
- and
- a semiconductor film over and in contact with the conductive film and the gate insulating film,
- wherein the conductive film has been etched in a portion over the metal film,
- wherein the portion is not in contact with the semiconductor film.
A semiconductor device comprising:
- a metal film over a substrate;
- a conductive film comprising an oxide over and in contact with the metal film;
- a semiconductor film over and in contact with the conductive film;
- and
- a gate electrode adjacent to the semiconductor film with a gate insulating film interposed therebetween,
- wherein the conductive film has been etched in a portion over the metal film,
- wherein the portion is not in contact with the semiconductor film.
A semiconductor device comprising:
- a gate electrode over a substrate;
- a gate insulating film over the gate electrode;
- a metal film over the gate insulating film;
- a conductive film comprising an oxide over and in contact with the metal film;
- a semiconductor film over and in contact with the conductive film and the gate insulating film;
- an inorganic film over the semiconductor film;
- and
- an organic resin film over the inorganic film,
- wherein the conductive film has been etched in a portion over the metal film,
- wherein the portion is not in contact with the semiconductor film.
Dependencies are inferred from the claim text.