Thin film transistor, active matrix substrate, and image pickup device
AssigneeFUJIFILM Corporation
InventorShinji Imai
Life of this patent
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Abstract
A thin film transistor including: source and drain electrodes, an active layer that contacts the source and drain electrodes and contains an oxide semiconductor, a gate electrode that controls current flowing between the source and drain electrodes via the active layer, a first insulating film that separates the gate electrode from the source and drain electrodes and the active layer, a bias electrode that is arranged at the opposite side of the active layer from the gate electrode, and has an electric potential fixed independently from the gate electrode, and a second insulating film that separates the bias electrode from the source and drain electrodes and the active layer.
Claims5
An active matrix substrate comprising:
- a plurality of thin film transistors, each thin film transistor comprising:
- source and drain electrodes,
- an active layer that contacts the source and drain electrodes and contains an oxide semiconductor, a gate electrode that controls current flowing between the source and drain electrodes via the active layer,
- a first insulating film that separates the gate electrode from the source and drain electrodes and the active layer,
- a bias electrode that is arranged at the opposite side of the active layer from the gate electrode, and has an electric potential fixed independently from the gate electrode, and
- a second insulating film that separates the bias electrode from the source and drain electrodes and the active layer, wherein
- the plurality of thin film transistors are arranged on a support, and
- all the bias electrodes are interconnected such that they are all electrically common with one another.
Dependencies are inferred from the claim text.