Hydrazine-free solution deposition of chalcogenide films
AssigneeInternational Business Machines Corporation
InventorsDavid B. Mitzi, Matthew W. Copel
Life of this patent
Estimating the term…
Abstract
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
Claims20
A device comprising a multilayer active layer having a plurality of metal chalcogenide films;
- wherein each of said metal chalcogenide films is prepared by a method comprising:
- (a) contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof;
- (b) applying said solution of said complex onto a substrate to produce a coating of said solution on said substrate;
- (c) removing said solvent from said coating to produce a film of said complex on said substrate;
- and thereafter
- (d) annealing said film of said complex to produce a metal chalcogenide film on said substrate;
- and
- (e) repeating steps (a), (b), (c) and (d) with the same or different chalcogenide to produce said multilayer film.
Dependencies are inferred from the claim text.