US 8,134,145 B2 · Organic electronic device

Abstract

Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.

Claims18

Dependent claims

An organic electronic device, comprising a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, and source/drain electrodes,

wherein the semiconductor layer and the source/drain electrodes include organic semiconductor type materials having different concentrations of carbon-based nanoparticles and organic semiconductor materials,
wherein the carbon-based nanoparticles and the organic semiconductor materials are the same in the semiconductor layer and the source/drain electrodes, and
wherein the organic semiconductor materials include at least one selected from the group consisting of anthracene, tetracene, pentacene, oligothiophene, polythiophene, merocyanine, copper phthalocyanine, perylene, polyaniline, polyacetylene, polypyrrole, polyphenylene, rubrene, coronene, anthradithiophene, polyfluorene, polyphenylenevinylene, and polythienylthiazole.

Dependencies are inferred from the claim text.

Organic electronic device

Life of this patent

Organic electronic device

Life of this patent

Abstract

Claims18