Back to results
US 8,134,144 B2Granted
Thin-film transistor
AssigneeXerox Corporation
InventorsYiliang Wu, Jessica Sacripante, Beng S. Ong, Paul Smith
Life of this patent
Estimating the term…
Abstract
There is provided herein a performance-enhancing composition comprising inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. This composition, when applied to a thin-film transistor, such as a bottom-gate thin-film transistor, as an overcoat or top layer, improves the carrier mobility and current on/off ratio of the thin film transistor. Also provided is the thin-film transistor produced utilizing this process and/or composition.
Claims4
A bottom-gate thin film transistor comprising:
- a substrate;
- a single gate electrode;
- a polyacrylate dielectric layer;
- a polythiophene semiconductor layer;
- a performance-enhancing top layer comprising a polysilsesquioxane polymer;
- a source electrode;
- and
- a drain electrode;
- wherein the performance-enhancing top layer contacts the semiconductor layer and the semiconductor layer is between the dielectric layer and the performance-enhancing top layer;
- wherein the performance-enhancing top layer covers the semiconductor layer, the source electrode, and the drain electrode;
- and
- wherein the performance-enhancing top layer increases the mobility and the current on/off ratio of the transistor.
9 more elements
Dependencies are inferred from the claim text.