Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
AssigneeAxon Technologies Corporation
InventorMichael N. Kozicki
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Abstract
A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.
Claims18
A programmable structure, comprising:
- a first electrode comprising semiconductor material;
- an ion conductor formed of an ion conductive material and conductive ions proximate the first electrode;
- and
- a second electrode proximate the ion conductor.
A method of forming a programmable structure, the method comprising the steps of:
- forming a first electrode comprising semiconductor material;
- forming an ion conductor over the first electrode;
- and
- forming a second electrode overlying the ion conductor material.
An array of a plurality of programmable structures, the array comprising a plurality of word lines and a plurality of bit lines, wherein each of the plurality of programmable structures comprises:
- a first electrode comprising semiconductor material;
- an ion conductor coupled to the first electrode;
- and
- a second electrode electrically coupled to the ion conductor.
Dependencies are inferred from the claim text.