Programmable metallization cell with ion buffer layer

A method for manufacturing a programmable metallization device, comprising:

• forming a first electrode;
• forming a memory layer electrically coupled to the first electrode;
• forming an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer;
• forming a conductive ion buffer layer between the ion supplying layer and the memory layer, and which allows diffusion therethrough of said ions;
• and
• forming a second electrode electrically coupled to the ion supplying layer.

A method for manufacturing a programmable metallization device, comprising:

• forming a first electrode;
• forming a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting bridge therethrough by an electrolytic reaction with an ion of a first metal element;
• depositing a metal layer on the memory layer, said metal layer not including the first metal element;
• depositing a chalcogenide on the metal layer;
• forming a second electrode electrically coupled to the chalcogenide;
• and
• annealing the metal layer and chalcogenide to form a compound between the memory layer and the chalcogenide including the metal from the metal layer and a chalcogen from the chalcogenide.