Programmable metallization memory cell with planarized silver electrode

A programmable metallization memory cell comprising:

• a first metal contact and a second metal contact;
• an ion conductor solid electrolyte material between the first metal contact and the second metal contact and in contact with the second metal contact;
• and
• a silver alloy doping electrode in contact with the first metal contact and in contact with the ion conductor solid electrolyte material and the silver alloy doping electrode separating the ion conductor solid electrolyte material from the first metal contact, the silver alloy doping electrode comprising an atomic mixture of silver atoms and aluminum atoms, gold atoms, ruthenium atoms, or titanium atoms and the silver alloy doping electrode has a surface RMS roughness of less than 2.0 nm and the silver alloy doping electrode being disposed closer to the semiconductor substrate than the ion conductor solid electrolyte material.