Particle attachment preventing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorTakahiro Murakami
Life of this patent
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Abstract
In a particle attachment preventing method in a substrate processing apparatus, an electron density control power supplied from the second power supply is adjusted such that an electron density above the substrate gets lower than during a plasma processing, for a preset short period of time after the plasma processing is ended, and a bias power supplied from the first power is maintained for the preset short period of time. The second power supply is a high frequency power supply for supplying a high frequency power having a frequency that is higher than that of the bias power, and in said adjusting of the electron density control power, the high frequency power supplied from the second power supply is lowered as compared with that during the plasma processing.
Claims8
A particle attachment preventing method in a substrate processing apparatus including an accommodation chamber configured to accommodate a substrate therein and generate a plasma therein, a mounting table configured to mount the accommodated substrate thereon, a first power supply configured to supply a bias power for attracting the plasma to the mounting table, and a second power supply configured to supply an electron density control power for controlling an electron density above the substrate, the method comprising:
- adjusting the electron density control power supplied from the second power supply such that the electron density above the substrate gets lower than during a plasma processing, for a preset short period of time after the plasma processing is ended;
- and
- maintaining the bias power supplied from the first power for the preset short period of time,
- wherein the preset short period of time is about 0.5 to 1.0 second.
A substrate processing apparatus comprising:
- an accommodation chamber configured to accommodate a substrate therein and generate a plasma therein;
- a mounting table configured to mount the accommodated substrate thereon;
- a first power supply configured to supply a bias power for attracting the plasma to the mounting table;
- and
- a second power supply configured to supply an electron density control power for controlling an electron density above the substrate,
- wherein the electron density control power supplied from the second power supply is adjusted such that the electron density above the substrate gets lower than during a plasma processing, for a preset short period of time after the plasma processing is ended, and
- the bias power supplied from the first power supply is maintained for the preset short period of time, and
- wherein the preset short period of time is about 0.5 to 1.0 second.
Dependencies are inferred from the claim text.