Solid-state imaging device and solid-state imaging device manufacturing method
AssigneePanasonic Corporation
InventorKenji Yokozawa
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Abstract
A solid-state imaging device 1 includes: a semiconductor substrate 11 on which pixels are placed like a matrix; and each of the pixels having a photoelectric conversion element 13 and a color filter layer 21 which is formed on the photoelectric conversion element 13. The solid-state imaging device 1 includes resin parts 20 which are formed at the boundaries of these photoelectric conversion devices 13 which are adjacent to each other, each of the resin parts 20 having an upward convex shape. Each color filter layer 21 of the device is formed so that the color filter layer covers the area ranging from the summit of a resin part to the summit of an adjacent resin part, and each color filter layer 21 is thinner in the peripheral part than in the center part around the summit.
Claims12
A solid-state imaging device comprising:
- a semiconductor substrate on which a plurality of photoelectric conversion elements are formed;
- a first transparent planarization film formed above said semiconductor substrate and above said photoelectric conversion elements;
- a surface protection film formed above said semiconductor substrate and above a boundary area between said photoelectric conversion elements adjacent to each other;
- a convex part formed on said surface protection film and above the boundary area;
- and
- a color filter formed above said first transparent planarization film and said convex part and above said photoelectric conversion elements,
- wherein said color filter has a concave top surface.
Dependencies are inferred from the claim text.