High silicon content siloxane polymers for integrated circuits
AssigneeSilecs Oy
InventorsJuha T. Rantala, Thomas Gädda, Jyri Paulasaari
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Abstract
Thin films are disclosed that are suitable as thin films in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a high silicon content film.
Claims13
A method of producing a poly(organosiloxane) composition, comprising the steps of
- hydrolyzing monomeric silicon compounds under conditions conducive to polymerization of the compounds to form a siloxane polymer material, and
- producing a partially cross-linked organosiloxane polymer in a stabililing organic solvent System, said partially cross-linked organosiloxane polymer exhibiting at least 1 silanol group per 100 groups, having the formula Si—ORHC, wherein RHC stands for hydrocarbyl residue, and having a moleculak weight of about 1,000 to 10,000 g/mol measured against a polystyrene standard.
Dependencies are inferred from the claim text.