Method of manufacturing porous insulating film, method of manufacturing semiconductor device, and semiconductor device
AssigneeRenesas Electronics Corporation
InventorsFuminori Ito, Yoshihiro Hayashi
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Abstract
A method includes forming an insulating film over a substrate by introducing a cyclic siloxane compound having a cyclic siloxane as a skeleton and having at least one volatile hydrocarbon group bonded to a side chain, and a silicon-containing compound into a plasma, and converting the insulating film to a porous insulating film by adding energy to the insulating film. The silicon-containing compound is decomposed using less energy as compared with the skeleton of the cyclic siloxane compound, the volatile hydrocarbon group, and the bond between the cyclic siloxane compound and the volatile hydrocarbon group.
Claims12
A method of manufacturing a porous insulating film comprising:
- forming an insulating film over a substrate by introducing a cyclic siloxane compound including a cyclic siloxane as a skeleton and including at least one volatile hydrocarbon group bonded to a side chain, and a silicon-containing compound, into a plasma;
- and
- converting said insulating film to a porous insulating film by adding energy to said insulating film,
- wherein said silicon-containing compound is decomposed using less energy as compared with energy to decompose the skeleton of said cyclic siloxane compound, said volatile hydrocarbon group, and the bond between said cyclic siloxane compound and said volatile hydrocarbon group.
Dependencies are inferred from the claim text.