Substrate for transparent electrodes
AssigneeFujikura Ltd.
InventorsTakuya Kawashima, Hiroshi Matsui, Kenichi Okada, Nobuo Tanabe
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Abstract
One object of the present invention is to provide a transparent electrode substrate with an ITO film formed thereon, used for example as the transparent electrode plate in a dye sensitized solar cell, for which the electrical resistance does not increase even when exposed to high temperatures of 300° C. or higher. In order to achieve the object, the present invention provides a substrate for a transparent electrode, wherein two or more layers of different transparent conductive films are formed on a transparent substrate, and an upper layer transparent conductive film has a higher heat resistance than that of a lower layer transparent conductive film.
Claims9
A method of producing a substrate for a transparent electrode comprising:
- forming an indium tin oxide film on a transparent substrate at 280° C. or higher by means of a spray pyrolysis deposition method;
- and
- subsequently forming a fluorine doped tin oxide film on the indium tin oxide film by means of a spray pyrolysis deposition method, wherein a raw material compound solution used for forming the fluorine doped tin oxide film is sprayed within 1 to 3 minutes of completing the formation of the indium tin oxide film.
A method of producing a substrate for a transparent electrode comprising:
- forming an indium tin oxide film on a transparent substrate by means of a spray pyrolysis deposition method;
- and
- subsequently forming a fluorine doped tin oxide film on the indium tin oxide film at a temperature of about 360 to about 440° C. by means of a spray pyrolysis deposition method, wherein a raw material compound solution used for forming the fluorine doped tin oxide film is sprayed within 1 to 3 minutes of completing the formation of the indium tin oxide film.
A method of producing a substrate for a transparent electrode comprising:
- forming an indium tin oxide film on a transparent substrate at 280° C. or higher by means of a spray pyrolysis deposition method;
- and
- subsequently forming a fluorine doped tin oxide film on the indium tin oxide film at a temperature of about 360 to about 440° C. by means of a spray pyrolysis deposition method, wherein a raw material compound solution used for forming the fluorine doped tin oxide film is sprayed within 1 to 3 minutes of completing the formation of the indium tin oxide film.
Dependencies are inferred from the claim text.