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US 8,133,802 B2Granted
Silicon-germanium hydrides and methods for making and using same
AssigneeArizona Board of Regents
InventorsJohn Kouvetakis, Cole J. Ritter, III
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Abstract
The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.
Claims34
A compound of formula I
- SiHn1 (GeHn2)y,
- wherein y is 3 or 4;
- wherein n1 is 1, 2, or 3 to satisfy valency;
- and
- wherein n2 is independently 0, 1, 2, or 3 for each Ge atom in the compound, to satisfy valency, and wherein when y is 3, then n2 is 2 for at least one Ge atom in the compound, and wherein when y is 3, then n1 is 1 or 2.
2 more elements
Dependencies are inferred from the claim text.