Carbon nano-film reversible resistance-switchable elements and methods of forming the same
AssigneeSanDisk 3D LLC
InventorsYubao Li, April D. Schricker
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Abstract
Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the first conductor, a carbon nano-film formed atop the surface and the discontinuous film of metal nanoparticles, and a second conductor disposed above the carbon nano-film. Numerous additional aspects are provided.
Claims13
A method of forming a microelectronic structure, the method comprising:
- forming a first conductor;
- forming a discontinuous film of metal nanoparticles on a surface above the first conductor, wherein the surface comprises metal surfaces and dielectric surfaces, and the dielectric surfaces comprise more surface area than the metal surfaces comprise;
- forming a carbon nano-film atop the surface and the discontinuous film of metal nanoparticles;
- forming a second conductor above the carbon nano-film;
- forming a damascene trench or via, filling the trench or via with dielectric material that covers the carbon nano-film;
- and
- planarizing the dielectric material to expose the carbon nano-film in the trench or via, wherein the damascene trench or via comprises the dielectric surfaces.
A method of forming a microelectronic structure, the method comprising:
- conditioning a deposition chamber by:
- heating an air atmosphere in the chamber to a temperature of about 650° C.;
- pumping out the air atmosphere until reaching an eventual pressure of about 30 mTorr;
- introducing acetylene and hydrogen into the chamber;
- stopping acetylene and hydrogen flow;
- pumping out the acetylene and hydrogen until returning to a pressure of about 30 mTorr;
- and
- introducing argon into the chamber until atmospheric pressure is reached;
- loading a substrate into the deposition chamber, wherein the substrate comprises a discontinuous film of metal nanoparticles on a surface of the substrate;
- annealing the substrate in the deposition chamber;
- and
- depositing a carbon nano-film atop the surface and the discontinuous film of metal nanoparticles after annealing the substrate.
A method of forming a microelectronic structure, the method comprising:
- conditioning a deposition chamber;
- loading a substrate into the deposition chamber, wherein the substrate comprises a discontinuous film of metal nanoparticles on a surface of the substrate;
- annealing the substrate in the deposition chamber by:
- reaching an initial pressure of about 30 mTorr and then bleeding in hydrogen gas, while maintaining a temperature of about 650° C. in the chamber;
- and
- depositing a carbon nano-film atop the surface and the discontinuous film of metal nanoparticles after annealing the substrate.
A method of forming a microelectronic structure, the method comprising:
- conditioning a deposition chamber;
- loading a substrate into the deposition chamber, wherein the substrate comprises a discontinuous film of metal nanoparticles on a surface of the substrate;
- annealing the substrate in the deposition chamber;
- and
- depositing a carbon nano-film atop the surface and the discontinuous film of metal nanoparticles after annealing the substrate, wherein depositing the carbon nano-film comprises introducing acetylene and hydrogen into the chamber, while maintaining a temperature of about 650° C. in the chamber.
Dependencies are inferred from the claim text.