Semiconductor device and fabrication method for the same
AssigneeKabushiki Kaisha Toshiba
InventorKeiichi Matsushita
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Abstract
A semiconductor device includes a substrate; a nitride based compound semiconductor layer placed on the substrate; an active area which is placed on the nitride based compound semiconductor layer, and is composed of an aluminum gallium nitride layer (AlxGa1-xN) (where 0.1<=x<=1); an isolation region which performs isolation of the active area mutually; a gate electrode, a source electrode, and a drain electrode which have been placed on the active area surrounded by the isolation region; and a trench region formed by etching for a part of the active area under the gate electrode. The semiconductor device is highly reliable, high performance and high power and a fabrication method for the same is also provided.
Claims8
A nitride based semiconductor device comprising:
- a substrate;
- a nitride based compound semiconductor layer placed on the substrate;
- an active area which is placed on the nitride based compound semiconductor layer, and is composed of an aluminum gallium nitride layer (AlxGa1-xN) (where 0.1<=x<=1);
- an isolation region which performs isolation of the active area;
- a trench region formed by etching a part of the active area directly under a gate electrode subsequently to be disposed on the active area;
- and
- the gate electrode, a source electrode, and a drain electrode which are placed on the active area surrounded by the isolation region, wherein
- the trench region is formed including a part of the active area directly under the gate electrode, in a tip region of said gate electrode.
A fabrication method for a nitride based semiconductor device comprising:
- forming a nitride based compound semiconductor layer on a substrate;
- forming an active area composed of an aluminum gallium nitride layer (AlxGa1-xN) (where 0.1<=x<=1) on the nitride based compound semiconductor layer;
- forming an isolation region which performs isolation of the active area;
- etching a part of the active area to form a trench region directly under a gate electrode subsequently to be disposed on the active area;
- and
- forming the gate electrode, a source electrode, and a drain electrode on the active area surrounded by the isolation region, wherein
- in the step of forming the trench region, the trench region is formed including the a part of active area directly under the gate electrode, in a tip region of the gate electrode.
Dependencies are inferred from the claim text.