Display device and manufacturing method of the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsSatoshi Kobayashi, Ikuko Kawamata, Koji Dairiki, Shigeki Komori, Toshiyuki Isa, Shunpei Yamazaki
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsSatoshi Kobayashi, Ikuko Kawamata, Koji Dairiki, Shigeki Komori, Toshiyuki Isa, Shunpei Yamazaki
Estimating the term…
A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.
A manufacturing method of a display device, comprising the steps of:
A manufacturing method of a display device, comprising the steps of:
Dependencies are inferred from the claim text.