Method of fabricating phase-change memory device having TiC layer
AssigneeSamsung Electronics Co., Ltd.
InventorsGyu-Hwan Oh, Young-Lim Park, Soon-Oh Park, Jin-Il Lee, Chang-Su Kim
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Abstract
Provided is a method of fabricating a phase-change memory device. The phase-change memory device includes a memory cell having a switching device and a phase change pattern. The method includes; forming a TiC layer on a contact electrically connecting the switching device using a plasma enhanced cyclic chemical vapor deposition (PE-cyclic CVD) process, patterning the TiC layer to form a lower electrode on the contact, and forming the phase-change pattern on the lower electrode.
Claims12
A method of fabricating a phase-change memory device, the phase-change memory device comprising a memory cell including a switching device and a phase change pattern, the method comprising:
- forming a TiC layer on a contact electrically connecting the switching device using a plasma enhanced cyclic chemical vapor deposition (PE-cyclic CVD) process, wherein forming the TiC layer comprises:
- loading a substrate including the contact plug into a reaction chamber capable of performing the PE-cyclic CVD process;
- and
- repeatedly performing a deposition cycle including a purge operation and a feeding operation on the substrate between 20 and 30 times, wherein during the purge operation an inert gas is supplied to the reaction chamber, and during the feeding operation a titanium source gas, a carbon source gas and the inert gas are supplied to the reaction chamber;
- patterning the TiC layer to form a lower electrode on the contact;
- and
- forming the phase-change pattern on the lower electrode.
A method of fabricating a phase-change memory device, the phase-change memory device comprising a memory cell including a switching device including a diode formed on a word line and a phase change pattern, the method comprising:
- forming a TiC layer on a contact electrically connecting the switching device using a plasma enhanced cyclic chemical vapor deposition (PE-cyclic CVD) process;
- patterning the TiC layer to form a lower electrode on the contact;
- forming the phase-change pattern on the lower electrode;
- sequentially stacking first and second semiconductor patterns in a contact hole formed in an interlayer insulating layer and exposing the word line to thereby form the diode in electrical contact with the word line;
- and
- forming a contact plug to fill the contact hole following formation of the diode, wherein the contact plug is the contact.
Dependencies are inferred from the claim text.