Image sensor and method for manufacturing the same

A method for manufacturing an image sensor, the method comprising:

• forming a circuitry including a metal line on a first substrate;
• and
• forming a photodiode on the metal line,
• wherein the forming of the circuitry on the first substrate comprises:
• forming an electric junction region and a transistor on the first substrate;
• forming a first interlayer dielectric layer on the electric junction region and the transistor;
• forming a metal layer and a reflective layer on the first interlayer dielectric layer sequentially;
• forming a reflective layer pattern and a metal pattern connecting the electric junction region or the transistor by selectively etching the metal layer and the reflective layer;
• forming a second interlayer dielectric layer on the reflective layer pattern;
• forming a contact hole in the second interlayer dielectric layer and the reflective layer pattern;
• and
• forming a metal contact in the contact hole passing through the reflective layer pattern and the second interlayer dielectric layer, the metal contact contacting a lower surface of the photodiode.