Solid-state image pickup device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorYusuke Kohyama
Life of this patent
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Abstract
In a solid-state image pick up device, a first conduction type semiconductor layer which has a first surface side. A second surface side which is located the opposite side of the first surface side and an image sensor area. A photo-conversion area which is configured in the first surface side and charges electron by photoelectric conversion. A first diffusion area of second conduction type for isolation, wherein the first diffusion area surrounds the photo-conversion area and extends from the first surface side to the middle part of the semiconductor layer and a second diffusion area of second conduction type for isolation, wherein the second diffusion area extends from the second surface side to the bottom of the first diffusion layer.
Claims8
A method for manufacturing a solid-state image pickup device comprising:
- configuring a photo-conversion area, which charges electron by photoelectric conversion, by implanting from a first surface side of a first conduction type semiconductor layer which has the first surface side, a second surface side which is located the opposite side of the first surface side and an image sensor area;
- configuring a first diffusion area of second conduction type for isolation, wherein the first diffusion area surrounds the photo-conversion area and extends from the first surface side to the middle part of the semiconductor layer;
- and
- configuring a second diffusion area of second conduction type for isolation, wherein the second diffusion area extends from the second surface side to the bottom of the first diffusion layer.
A method for manufacturing a solid-state image pickup device comprising:
- configuring a BOX layer on a first support substrate which comprise an image sensor area and a peripheral area;
- configuring a SOI layer of first conduction type on the BOX layer;
- configuring an epitaxial layer on the SOI layer;
- configuring a first diffusion layer of second conduction type in the image sensor area selectively, wherein the first diffusion layer extends from a first surface side, which is located to the opposite side of a second surface side adjacent to the SOI layer in the surface of the epitaxial layer in the image sensor area, to approximately a half thickness of the epitaxial layer where a bottom of the first diffusion layer is positioned to;
- configuring a gate electrode on the first surface side through a gate insulating film;
- configuring a source, a drain, a first shield layer of second conduction type and a photo-conversion area of first conduction type selectively in the first surface of the epitaxial layer of the image sensor area;
- configuring a interconnect layer, which comprising a wire and a interlayer insulation film, on the first surface of the epitaxial layer of first conduction type;
- configuring a second support substrate on the interconnect layer;
- exposing the SOI layer by removing the first support substrate and the BOX layer;
- configuring a second diffusion layer of second conduction type, which extends from the exposing surface side of the SOI layer adjacent to the bottom of the first diffusion layer;
- configuring a photo-shielding layer on the second surface side of the epitaxial layer at least in the image sensor area, wherein the photo-shielding layer is covering a peripheral part of the photo-conversion area;
- and
- configuring a micro lens on the second surface side of the photo-conversion area.
Dependencies are inferred from the claim text.