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US 8,133,750 B2Granted
Method for forming extended gate field effect transistor (EGFET) based sensor and the sensor therefrom
AssigneeNational Yunlin University of Science and Technology
InventorsJung-Chuan Chou, Cheng-Wei Chen, Yu-Huei Jiang
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Abstract
The invention provides a method for forming an extended gate field effect transistor (EGFET) based sensor, including: (a) providing a substrate; (b) forming a sensing film including titanium dioxide, ruthenium doped titanium dioxide or ruthenium oxide on the substrate; and (c) forming a conductive wire extended from the sensing film for external contact.
Claims33
A method for forming an extended gate field effect transistor
- (EGFET) based sensor, comprising:
- (a) providing a substrate;
- (b) forming a sensing film comprising titanium dioxide, ruthenium doped titanium dioxide or ruthenium oxide on the substrate;
- (c) forming a conductive wire extended from the sensing film for external contact;
- and
- (d) forming a calcium ion sensing membrane on the sensing.
3 more elements
An extended gate field effect transistor based sensor, comprising:
- a substrate;
- a sensing film comprising titanium dioxide, ruthenium doped titanium dioxide or ruthenium oxide on the substrate;
- a conducting wire extended from the sensing film as an electrical contact;
- and
- a calcium ion sensing membrane on the sensing film.
2 more elements
Dependencies are inferred from the claim text.