Methods of forming patterns

A method of forming a pattern of openings over a substrate, comprising:

• forming spaced features over a substrate, the features having tops and having sidewalls extending downwardly from the tops;
• the substrate being exposed within gaps between the spaced features;
• forming a first material across the tops and sidewalls of the features;
• after forming the first material, providing fill material between the features while leaving regions of the first material exposed;
• removing the exposed regions of the first material;
• the removal of the exposed regions of the first material creating the pattern of openings over the substrate;
• and
• wherein the openings have widths along a cross-section, and further comprising extending said widths by removing some of the fill material after forming said openings.

A method of forming a pattern of openings over a substrate, comprising:

• forming spaced features over a substrate;
• forming a metal-containing layer across the features, and across spaces between the features;
• the metal-containing layer having an undulating topography;
• the undulating topography of the metal-containing layer comprising peaks over the features, and comprising valleys within the spaces between the features;
• providing fill material to fill the valleys while leaving the peaks of the metal-containing layer exposed;
• and
• removing exposed regions of the metal-containing layer selectively relative to the fill material and to the features;
• the removal of the exposed regions of the metal-containing layer creating the pattern of openings over the substrate.

A method of forming a pattern of openings over a substrate, comprising:

• photolithographically forming a plurality of photoresist features over the substrate, the features being spaced from one another by gaps;
• laterally trimming the photoresist features;
• treating the trimmed photoresist features to render them insoluble during subsequent spin-casting of a layer;
• spin-casting the layer across the features and within the gaps;
• the spin-cast layer having an undulating topography;
• the undulating topography of the comprising peaks over the features, and comprising valleys within the gaps between the features;
• forming photoresist fill within the valleys while leaving the peaks of the spin-cast layer exposed;
• removing exposed regions of the spin-cast layer selectively relative to the photoresist fill and to the features;
• the removal of the exposed regions of the spin-cast layer creating the pattern of openings over the substrate;
• and
• expanding the openings of said pattern by patterning the photoresist fill, and then removing portions of the spin-cast layer exposed after the patterning of the photoresist fill.