Method of manufacturing a coordinate detector
AssigneeFujitsu Component Limited
InventorKoichi Kondoh
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Abstract
A method of manufacturing a coordinate detector having a resistive film and a common electrode for applying a voltage to the resistive film is disclosed that includes the steps of (a) applying a photoresist onto the resistive film formed on a substrate formed of an insulator; (b) forming a resist pattern on the resistive film by exposing the applied photoresist to light through a predetermined mask and subsequently developing the applied photoresist; (c) forming a resistive film removal region by removing a portion of the resistive film without the resist pattern; (d) removing the resist pattern after step (c); and (e) forming the common electrode over the resistive film removal region after step (d).
Claims6
A method of manufacturing a coordinate detector having a resistive film and a common electrode for applying a voltage to the resistive film, the method comprising the steps of
- (a) applying a photoresist onto the resistive film formed on a substrate formed of an insulator;
- (b) forming a resist pattern on the resistive film by exposing the applied photoresist to light through a predetermined mask and subsequently developing the applied photoresist;
- (c) forming a resistive film removal region by removing a portion of the resistive film without the resist pattern;
- (d) removing the resist pattern after said step (c);
- and
- (e) forming the common electrode over the resistive film removal region after said step (d).
A method of manufacturing a coordinate detector having a resistive film and a common electrode for applying a voltage to the resistive film, the method comprising the steps of:
- (a) applying a photoresist onto the resistive film formed on a substrate formed of an insulator;
- (b) forming a resist pattern on the resistive film by exposing the applied photoresist to light through a predetermined mask and subsequently developing the applied photoresist;
- and
- (c) forming a resistive film removal region by removing a portion of the resistive film without the resist pattern,
- wherein the common electrode is formed between a peripheral edge of the resistive film and the resistive film removal region so that a distance between adjacent sides of the common electrode and the resistive film removal region is more than or equal to 0 mm and less than or equal to 5 mm.
Dependencies are inferred from the claim text.