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US 8,133,578 B2Granted
Microstructure and method of manufacturing the same
AssigneeFUJIFILM Corporation
InventorYusuke Hatanaka
Life of this patent
Estimating the term…
Abstract
A microstructure that comprises an insulating base material having through micropores filled with metal at a high filling ratio and that can be used as an anisotropically conductive member is provided. The microstructure comprises an insulating base material having through micropores with a pore size of from 10 to 500 nm at a density of from 1×106 to 1×1010 pores/mm2, a metal being filled into the through micropores at a filling ratio of at least 80%.
Claims16
A microstructure comprising:
- an insulating base material having through micropores with a pore size of from 10 to 500 nm at a density of from 1×106 to 1×1010 pores/mm2, a metal being filled into the through micropores at a filling ratio of at least 80%, and
- wherein a degree of ordering as defined by formula (I):
- Degree of ordering (%)=B/A×100 (1)
- (wherein A represents a total number of through micropores in a measurement region, and B represents a number of specific through micropores in the measurement region for which, when a circle is drawn so as to be centered on a center of gravity of a specific through micropore and so as to be of a smallest radius that is internally tangent to an edge of another through micropore, the circle includes centers of gravity of six through micropores other than the specific through micropore) is at least 50%.
1 more element
Dependencies are inferred from the claim text.